- 您现在的位置：买卖IC网 > Sheet目录484 > NP110N04PUJ-E1B-AY (Renesas Electronics America)MOSFET N-CH 40V MP-25ZP/TO-263
NP110N04PUJ
ELECTRICAL CHARACTERISTICS (T A = 25 ° C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Threshold Voltage
SYMBOL
I DSS
I GSS
V GS(th)
TEST CONDITIONS
V DS = 40 V, V GS = 0 V
V GS = ± 20 V, V DS = 0 V
V DS = V GS , I D = 250 μ A
MIN.
2.0
TYP.
3.0
MAX.
1
± 100
4.0
UNIT
μ A
nA
V
Forward Transfer Admittance
Note
| y fs |
V DS = 5 V, I D = 55 A
55
118
S
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Note
R DS(on)
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q G
Q GS
Q GD
V GS = 10 V, I D = 55 A
V DS = 25 V,
V GS = 0 V,
f = 1 MHz
V DD = 20 V, I D = 55 A,
V GS = 10 V,
R G = 0 Ω
V DD = 32 V,
V GS = 10 V,
I D = 110 A
1.4
9500
1250
410
45
22
100
15
150
35
45
1.8
14250
1880
740
100
60
200
40
230
m Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note
V F(S-D)
t rr
Q rr
I F = 110 A, V GS = 0 V
I F = 110 A, V GS = 0 V,
di/dt = 100 A/ μ s
0.9
68
135
1.5
V
ns
nC
Note Pulsed test
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
PG.
D.U.T.
R G = 25 Ω
50 Ω
L
V DD
PG.
D.U.T.
R G
R L
V DD
V GS
Wave Form
V GS
0
10%
V GS
90%
V GS = 20 → 0 V
V DS
90%
90%
V DD
I D
I AS
BV DSS
V DS
V GS
0
τ
V DS
Wave Form
V DS
0
t d(on)
10%
t r
10%
t d(off)
t f
Starting T ch
τ = 1 μ s
Duty Cycle ≤ 1%
t on
t off
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I G = 2 mA
R L
2
PG.
50 Ω
V DD
Data Sheet D19730EJ1V0DS
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
NP110N055PUG-E2-AY
MOSFET N-CH 55V MP-25ZP/TO-263
NP110N055PUJ-E2B-AY
MOSFET N-CH 55V MP-25ZP/TO-263
NP15P06SLG-E1-AY
MOSFET P-CH -60V MP-3ZK/TO-252
NP160N04TUG-E1-AY
MOSFET N-CH 40V 160A TO-263-7
NP161N04TUG-E1-AY
MOSFET N-CH 40V 160A TO-263-7
NP180N04TUG-E1-AY
MOSFET N-CH 40V 180A TO-263-7
NP22N055SLE-E1-AY
MOSFET N-CH 55V 22A TO-252
NP32N055SHE-E1-AY
MOSFET N-CH 55V 32A TO-252
相关代理商/技术参数
NP110N04PUJ-E2B-AY
制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR
NP110N04PUK
制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR
NP110N04PUK-E1-AY
制造商:Renesas Electronics Corporation 功能描述:POWER MOSFET - Rail/Tube 制造商:Renesas Electronics Corporation 功能描述:MOSFET N-CH 40V 110A TO-263
NP110N055PUG-E1
制造商:Renesas Electronics Corporation 功能描述:
NP110N055PUG-E1-A
制造商:Renesas Electronics Corporation 功能描述:
NP110N055PUG-E1-AY
制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 55V 110A 3-Pin(2+Tab) TO-263 T/R 制造商:Renesas Electronics Corporation 功能描述:SINGLE MOSFET, NCH, 55V, TO263ZP - Tape and Reel 制造商:Renesas Electronics Corporation 功能描述:MOSFET N-CH 55V 110A TO-263 制造商:Renesas Electronics Corporation 功能描述:Transistor,FET,Nch,55V/110A,Tch175
NP110N055PUG-E1-AY/K
制造商:Renesas Electronics Corporation 功能描述:
NP110N055PUG-E1-AZ
制造商:Renesas Electronics Corporation 功能描述:Transistor,FET,Nch,55V/110A,Tch175